Publications

Paul Fons, A.V. Kolobov (Herzen State Pedagogical University of Russia), Yuta Saito (AIST) (2020). Role of Electric fields in interfacial phase-change memory. *Physica Status Solidi, Rapid Research Letters (invited) , (in press).

Paul Fons(?), A.V. Kolobov (AIST)(?), J. Tominaga (AIST) (2016). Electronic excitation-induced semiconductor-to-metal transition in monolayer MoTe₂. Nature Materials, 3(9):703–708 (2004).

Paul Fons(?), K. V. Mitrofanov(?), et. al (2016). Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials. Nature Materials, 3(9):703–708 (2004).

Paul Fons(?), Shogo Hatayama(?), Yi Shuang, Yuta Saito, Alexander V. Kolobov, Keisuke Kobayashi, Satoshi Shindo, Daisuke Ando, Yuji Sutou (2016). Cr-Triggered Local Structural Change in Cr₂Ge₂Te₆ Phase Change Material. Nature Materials, 3(9):703–708 (2004).

Paul Fons, H. Osawa, A.V. Kolobov, T. Fukaya, M. Suzuki, T. Uruga, N. Kawamura, H. Tanida, J. Tominaga (2010). Photo-assisted amorphization of the phase-change memory alloy. Physical Review B (rapid communication), 82(4):041203, 2010..

Paul Fons(?), A.V. Kolobov(?), A. Frenkel, A.L. Ankudinov, T. Uruga, J. Tominaga (2004). Understanding the phase-change mechanism of rewritable optical media. Nature Materials, 3(9):703–708 (2004).